IPP126N10N3 G vs IPP126N10N3G,126N10N vs IPP126N10N3G,126N10N,IPP

 
PartNumberIPP126N10N3 GIPP126N10N3G,126N10NIPP126N10N3G,126N10N,IPP
DescriptionMOSFET N-Ch 100V 58A TO220-3 OptiMOS 3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current58 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge35 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation94 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min29 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesIPP126N10N3GXKSA1 IPP126N1N3GXK SP000683088--
Unit Weight0.211644 oz--
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