PartNumber | IPT059N15N3 | IPT059N15N3ATMA1 | IPT059N15N3(SP001100162) |
Description | MOSFET MV POWER MOS | MOSFET MV POWER MOS | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-HSOF-8 | PG-HSOF-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 150 V | 150 V | - |
Id Continuous Drain Current | 155 A | 155 A | - |
Rds On Drain Source Resistance | 5.9 mOhms | 5.9 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 69 nC | 69 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 375 W | 375 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 2.4 mm | 2.4 mm | - |
Length | 10.58 mm | 10.58 mm | - |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 10.1 mm | 10.1 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 86 S | 86 S | - |
Fall Time | 14 ns | 14 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 35 ns | 35 ns | - |
Factory Pack Quantity | 2000 | 2000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 46 ns | 46 ns | - |
Typical Turn On Delay Time | 25 ns | 25 ns | - |
Part # Aliases | IPT059N15N3ATMA1 SP001100162 | IPT059N15N3 SP001100162 | - |
Unit Weight | - | 0.002293 oz | - |