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| PartNumber | IPU80R1K0CEAKMA1 | IPU80R1K0CE | IPU80R1K0CEBKMA1 |
| Description | MOSFET CONSUMER | MOSFET N-Ch 800V 5.7A IPAK-3 | MOSFET N-Ch 800V 5.7A IPAK-3 |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-251-3 | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Packaging | Tube | - | Tube |
| Height | 6.22 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | CoolMOS CE | - | XPU80R1 |
| Width | 2.38 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPU80R1K0CE SP001593928 | - | - |
| Unit Weight | 0.011993 oz | - | 0.012102 oz |
| Part Aliases | - | - | IPU80R1K0CE SP001100624 |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | TO-251-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 83 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 8 ns |
| Rise Time | - | - | 15 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 5.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 800 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 950 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 72 ns |
| Typical Turn On Delay Time | - | - | 25 ns |
| Qg Gate Charge | - | - | 31 nC |