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| PartNumber | IRF1010NSTRL | IRF1010NS | IRF1010NSPBF |
| Description | MOSFET N-CH 55V 85A D2PAK | MOSFET Transistor, N-Channel, TO-263AB | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC |
| Manufacturer | - | - | IR |
| Product Category | - | - | FETs - Single |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 3.8 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 48 ns |
| Rise Time | - | - | 76 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 84 A |
| Vds Drain Source Breakdown Voltage | - | - | 55 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V to 4 V |
| Rds On Drain Source Resistance | - | - | 11 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 39 ns |
| Typical Turn On Delay Time | - | - | 13 ns |
| Qg Gate Charge | - | - | 80 nC |
| Forward Transconductance Min | - | - | 32 S |
| Channel Mode | - | - | Enhancement |