 |  |  | |
| PartNumber | IRF200P222 | IRF200B211 | IRF2001 |
| Description | MOSFET IFX OPTIMOS | MOSFET TRENCH_MOSFETS | |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247AC-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 182 A | 12 A | - |
| Rds On Drain Source Resistance | 6.6 mOhms | 170 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 203 nC | 15.3 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | StrongIRFET | StrongIRFET | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 142 S | 13 S | - |
| Fall Time | 97 ns | 6.5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 96 ns | 9.5 ns | - |
| Factory Pack Quantity | 400 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 77 ns | 11.3 ns | - |
| Typical Turn On Delay Time | 25 ns | 6.5 ns | - |
| Part # Aliases | SP001582092 | SP001561622 | - |
| Unit Weight | 0.211644 oz | 0.081130 oz | - |
| Pd Power Dissipation | - | 80 W | - |
| Height | - | 15.65 mm | - |
| Length | - | 10 mm | - |
| Width | - | 4.4 mm | - |