IRF2807ZSPBF vs IRF2807ZSTRL vs IRF2807ZS

 
PartNumberIRF2807ZSPBFIRF2807ZSTRLIRF2807ZS
DescriptionMOSFET 75V 1 N-CH HEXFET 9.4mOhms 71nCMOSFET N-CH 75V 75A D2PAKMOSFET N-CH 75V 75A D2PAK
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current89 A--
Rds On Drain Source Resistance9.4 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge71 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation170 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel--
TypeHEXFET Power MOSFET--
Width9.25 mm--
BrandInfineon / IR--
Forward Transconductance Min67 S--
Fall Time45 ns--
Product TypeMOSFET--
Rise Time79 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesSP001564678--
Unit Weight0.139332 oz--
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