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| PartNumber | IRF3709LPBF | IRF3709 | IRF3709L |
| Description | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | MOSFET N-CH 30V 90A TO-220AB | MOSFET N-CH 30V 90A TO-262 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Rds On Drain Source Resistance | 10.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 27 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 120 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Smps MOSFET | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 9.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 171 ns | - | - |
| Factory Pack Quantity | 3200 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | SP001561748 | - | - |
| Unit Weight | 0.084199 oz | - | - |