PartNumber | IRF60B217 | IRF60DM206 | IRF6053 |
Description | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg | MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | SMD/SMT | - |
Package / Case | TO-220-3 | DirectFET-ME | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 60 A | 130 A | - |
Rds On Drain Source Resistance | 7.3 mOhms | 2.2 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | 3 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 44 nC | 133 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 150 C | - |
Pd Power Dissipation | 83 W | 96 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | StrongIRFET | StrongIRFET | - |
Packaging | Tube | Reel | - |
Height | 15.65 mm | 0.7 mm | - |
Length | 10 mm | 6.35 mm | - |
Width | 4.4 mm | 5.05 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Forward Transconductance Min | 150 S | 148 S | - |
Fall Time | 20 ns | 30 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 37 ns | 32 ns | - |
Factory Pack Quantity | 1000 | 4800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 24 ns | 60 ns | - |
Typical Turn On Delay Time | 8.3 ns | 17 ns | - |
Part # Aliases | SP001571396 | SP001561876 | - |
Unit Weight | 0.081130 oz | - | - |