PartNumber | IRF710 | IRF7101PBF | IRF7101 |
Description | MOSFET RECOMMENDED ALT 844-IRF710PBF | MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC | HEXFET N-CH MOSFET 3.5A 20V SOIC8, RL |
Manufacturer | Vishay | Infineon | IR |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | N | Y | - |
Technology | Si | Si | - |
Packaging | Tube | Tube | - |
Series | IRF | - | - |
Brand | Vishay / Siliconix | Infineon / IR | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 50 | 95 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.211644 oz | 0.019048 oz | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | SO-8 | - |
Number of Channels | - | 2 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 3.5 A | - |
Rds On Drain Source Resistance | - | 150 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Vgs Gate Source Voltage | - | 12 V | - |
Qg Gate Charge | - | 10 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 2 W | - |
Configuration | - | Dual | - |
Channel Mode | - | Enhancement | - |
Height | - | 1.75 mm | - |
Length | - | 4.9 mm | - |
Transistor Type | - | 2 N-Channel | - |
Type | - | HEXFET Power MOSFET | - |
Width | - | 3.9 mm | - |
Forward Transconductance Min | - | 1.1 S | - |
Fall Time | - | 30 ns | - |
Rise Time | - | 10 ns | - |
Typical Turn Off Delay Time | - | 24 ns | - |
Typical Turn On Delay Time | - | 7 ns | - |
Part # Aliases | - | SP001559728 | - |