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| PartNumber | IRF7101PBF | IRF7101 | IRF7101TR |
| Description | MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC | HEXFET N-CH MOSFET 3.5A 20V SOIC8, RL | 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3.5 A | - | - |
| Rds On Drain Source Resistance | 150 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 10 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 1.1 S | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 95 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 24 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Part # Aliases | SP001559728 | - | - |
| Unit Weight | 0.019048 oz | - | - |