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| PartNumber | IRF7105 | IRF7105PBF | IRF7105PBF-1 |
| Description | MOSFET Transistor, Pair, Complementary, SO | MOSFET N/P-CH 25V 8-SOIC | |
| Manufacturer | IR | Infineon Technologies | - |
| Product Category | FETs - Arrays | IC Chips | - |
| Series | - | HEXFETR | - |
| Packaging | - | Tube Alternate Packaging | - |
| Unit Weight | - | 0.019048 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | 8-SO | - |
| Configuration | - | Dual Dual Drain | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 2W | - |
| Transistor Type | - | 1 N-Channel 1 P-Channel | - |
| Drain to Source Voltage Vdss | - | 25V | - |
| Input Capacitance Ciss Vds | - | 330pF @ 15V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 3.5A, 2.3A | - |
| Rds On Max Id Vgs | - | 100 mOhm @ 1A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 27nC @ 10V | - |
| Pd Power Dissipation | - | 2 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 25 ns 37 ns | - |
| Rise Time | - | 9 ns 13 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 3.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 25 V | - |
| Rds On Drain Source Resistance | - | 160 mOhms | - |
| Transistor Polarity | - | N-Channel P-Channel | - |
| Typical Turn Off Delay Time | - | 45 ns | - |
| Typical Turn On Delay Time | - | 7 ns 12 ns | - |
| Qg Gate Charge | - | 9.4 nC | - |
| Channel Mode | - | Enhancement | - |