IRF7325PBF vs IRF7325TR vs IRF7325

 
PartNumberIRF7325PBFIRF7325TRIRF7325
DescriptionMOSFET DUAL -12V P-CH HEXFET 24mOhmsMOSFET 2P-CH 12V 7.8A 8-SOICMOSFET 2P-CH 12V 7.8A 8-SOIC
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current7.8 A--
Rds On Drain Source Resistance24 mOhms--
Vgs Gate Source Voltage8 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingTube-Tube
Height1.75 mm--
Length4.9 mm--
Transistor Type2 P-Channel--
TypePower MOSFET--
Width3.9 mm--
BrandInfineon / IR--
Fall Time180 ns--
Product TypeMOSFET--
Rise Time9.8 ns--
Factory Pack Quantity4085--
SubcategoryMOSFETs--
Typical Turn Off Delay Time240 ns--
Typical Turn On Delay Time9.4 ns--
Unit Weight0.019048 oz--
Series--HEXFETR
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--2 P-Channel (Dual)
Power Max--2W
Drain to Source Voltage Vdss--12V
Input Capacitance Ciss Vds--2020pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--7.8A
Rds On Max Id Vgs--24 mOhm @ 7.8A, 4.5V
Vgs th Max Id--900mV @ 250μA
Gate Charge Qg Vgs--33nC @ 4.5V
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