IRF7506TRPBF vs IRF7506TRPBF-CUT TAPE vs IRF7506TR

 
PartNumberIRF7506TRPBFIRF7506TRPBF-CUT TAPEIRF7506TR
DescriptionMOSFET MOSFT DUAL PCh -30V 1.7A Micro 8MOSFET 2P-CH 30V 1.7A MICRO8
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseMicro-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current1.7 A--
Rds On Drain Source Resistance270 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Digi-ReelR
Height1.11 mm--
Length3 mm--
Transistor Type2 P-Channel--
Width3 mm--
BrandInfineon Technologies--
Forward Transconductance Min0.92 S--
Fall Time9.3 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time9.7 ns--
Part # AliasesSP001572092--
Unit Weight0.004268 oz--
Series--HEXFETR
Package Case--8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--Micro8
FET Type--2 P-Channel (Dual)
Power Max--1.25W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--180pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--1.7A
Rds On Max Id Vgs--270 mOhm @ 1.2A, 10V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--11nC @ 10V
Top