IRF7530PBF vs IRF7530 vs IRF7530TR

 
PartNumberIRF7530PBFIRF7530IRF7530TR
DescriptionMOSFET MICRO-8MOSFET 2N-CH 20V 5.4A MICRO8
ManufacturerInfineonIORIR
Product CategoryMOSFETFETs - ArraysFETs - Arrays
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5.4 A--
Rds On Drain Source Resistance30 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge18 nC--
Pd Power Dissipation1.3 W--
ConfigurationDual--
Height1.75 mm--
Length4.9 mm--
Transistor Type2 N-Channel--
Width3.9 mm--
BrandInfineon / IR--
Product TypeMOSFET--
SubcategoryMOSFETs--
Unit Weight0.017870 oz--
Series--HEXFETR
Packaging--Digi-ReelR
Package Case--8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--Micro8
FET Type--2 N-Channel (Dual)
Power Max--1.3W
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--1310pF @ 15V
FET Feature--Standard
Current Continuous Drain Id 25°C--5.4A
Rds On Max Id Vgs--30 mOhm @ 5.4A, 4.5V
Vgs th Max Id--1.2V @ 250μA
Gate Charge Qg Vgs--26nC @ 4.5V
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