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| PartNumber | IRF7910TRPBF | IRF7910PBF | IRF7910 |
| Description | MOSFET MOSFT DUAL NCh 12V 10A | MOSFET 2N-CH 12V 10A 8-SOIC | MOSFET, DUAL N CH, 12V, 10A, SOIC-8 |
| Manufacturer | Infineon | - | IR |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 15 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Qg Gate Charge | 26 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 18 S | - | - |
| Fall Time | 6.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001565662 | - | - |
| Unit Weight | 0.017870 oz | - | - |