IRF830PBF vs IRF830PBF 2SK3305 vs IRF830PBF,IRF730,

 
PartNumberIRF830PBFIRF830PBF 2SK3305IRF830PBF,IRF730,
DescriptionMOSFET N-CH 500V HEXFET MOSFET
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220AB-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance1.5 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge38 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation74 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
SeriesIRF--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min2.5 S--
Fall Time16 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time42 ns--
Typical Turn On Delay Time8.2 ns--
Part # AliasesSIHF830-E3--
Unit Weight0.211644 oz--
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