IRF9328TRPBF vs IRF9328PBF vs IRF9328

 
PartNumberIRF9328TRPBFIRF9328PBFIRF9328
DescriptionMOSFET MOSFT P-Ch -30V -12A 11.9mOhmMOSFET 1 P-CH -30V HEXFET 11.9mOhms 8.5nC
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance16.1 mOhms19.7 mOhms-
Vgs th Gate Source Threshold Voltage1.8 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge18 nC18 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
PackagingReelTubeTube
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
Transistor Type1 P-Channel1 P-Channel1 P-Channel
Width3.9 mm3.9 mm-
BrandInfineon TechnologiesInfineon / IR-
Forward Transconductance Min20 S--
Fall Time66 ns--
Product TypeMOSFETMOSFET-
Rise Time57 ns--
Factory Pack Quantity400095-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time80 ns--
Typical Turn On Delay Time19 ns--
Part # AliasesSP001560146SP001555830-
Unit Weight0.017870 oz0.019048 oz0.019048 oz
Package Case--SOIC-8
Pd Power Dissipation--2.5 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--- 12 A
Vds Drain Source Breakdown Voltage--- 30 V
Rds On Drain Source Resistance--19.7 mOhms
Qg Gate Charge--18 nC
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