PartNumber | IRFD120PBF | IRFD120PBF,FD120,IRFD120 | IRFD120PBF,IRFD120 |
Description | MOSFET N-CH 100V HEXFET MOSFET HEXDI | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | HVMDIP-4 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 1.3 A | - | - |
Rds On Drain Source Resistance | 270 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 16 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 1.3 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Height | 3.37 mm | - | - |
Length | 6.29 mm | - | - |
Series | IRFD | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 5 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 0.8 S | - | - |
Fall Time | 17 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 27 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 18 ns | - | - |
Typical Turn On Delay Time | 6.8 ns | - | - |