IRFH4213DTRPBF vs IRFH4213TR2PBF vs IRFH4213TRPBF

 
PartNumberIRFH4213DTRPBFIRFH4213TR2PBFIRFH4213TRPBF
DescriptionMOSFET 25V Single N-Ch HEXFET PWR 50AMOSFET N-CH 25V 41A 8PQFN
ManufacturerInfineon-International Rectifier
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePQFN-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance1.5 mOhms--
Vgs th Gate Source Threshold Voltage1.6 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge55 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation3.6 W--
ConfigurationSingle-Single
TradenameFastIRFet--
PackagingReel-Reel
Height0.83 mm--
Length6 mm--
Transistor Type1 N-Channel-1 N-Channel
Width5 mm--
BrandInfineon Technologies--
Forward Transconductance Min340 S--
Fall Time12 ns-12 ns
Product TypeMOSFET--
Rise Time30 ns-35 ns
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns-17 ns
Typical Turn On Delay Time14 ns-14 ns
Part # AliasesSP001556336--
Package Case--PQFN-8
Pd Power Dissipation--3.6 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--41 A
Vds Drain Source Breakdown Voltage--25 V
Vgs th Gate Source Threshold Voltage--1.6 V
Rds On Drain Source Resistance--1.5 mOhms
Qg Gate Charge--54 nC
Forward Transconductance Min--228 S
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