IRFP4227PBF vs IRFP4227 vs IRFP4228PBF

 
PartNumberIRFP4227PBFIRFP4227IRFP4228PBF
DescriptionMOSFET MOSFT 200V 65A 25mOhm 70nC QgIGBT Transistors MOSFET MOSFT 150V 78A 15.5mOhm 72nCAC
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-MOSFET (Metal Oxide)
Mounting StyleThrough Hole--
Package / CaseTO-247-3-TO-247-3
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current65 A--
Rds On Drain Source Resistance25 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge70 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation330 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube-Bulk
Height20.7 mm--
Length15.87 mm--
Transistor Type1 N-Channel--
Width5.31 mm--
BrandInfineon Technologies--
Forward Transconductance Min49 S--
Fall Time31 ns--
Product TypeMOSFET--
Rise Time20 ns--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time33 ns--
Part # AliasesSP001560510--
Unit Weight1.340411 oz--
Series--HEXFET
Part Status--Obsolete
FET Type--N-Channel
Drain to Source Voltage (Vdss)--150V
Current Continuous Drain (Id) @ 25°C--78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id--5V @ 250A
Gate Charge (Qg) (Max) @ Vgs--107nC @ 10V
Vgs (Max)--±30V
Input Capacitance (Ciss) (Max) @ Vds--4530pF @ 25V
FET Feature---
Power Dissipation (Max)--310W (Tc)
Rds On (Max) @ Id, Vgs--15.5 mOhm @ 33A, 10V
Operating Temperature---40°C ~ 175°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--TO-247AC
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