PartNumber | IRFR1205TRPBF | IRFR1205TRLPBF | IRFR1205TRL |
Description | MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC | MOSFET MOSFT 55V 37A 27mOhm 43.3nC | MOSFET N-CH 55V 44A DPAK |
Manufacturer | Infineon | Infineon | IR |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
Id Continuous Drain Current | 37 A | 37 A | - |
Rds On Drain Source Resistance | 27 mOhms | 27 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 43.3 nC | 65 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 69 W | 107 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | HEXFET Power MOSFET | - | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon / IR | - |
Fall Time | 60 ns | 60 ns | 60 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 69 ns | 69 ns | 69 ns |
Factory Pack Quantity | 2000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 47 ns | 47 ns | 47 ns |
Typical Turn On Delay Time | 7.3 ns | 7.3 ns | 7.3 ns |
Part # Aliases | SP001560566 | SP001575974 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Forward Transconductance Min | - | 17 S | - |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 107 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 44 A |
Vds Drain Source Breakdown Voltage | - | - | 55 V |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Rds On Drain Source Resistance | - | - | 27 mOhms |
Qg Gate Charge | - | - | 65 nC |
Forward Transconductance Min | - | - | 17 S |