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| PartNumber | IRFR48ZTRLPBF | IRFR48ZPBF | IRFR48Z |
| Description | MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 62 A | - | - |
| Rds On Drain Source Resistance | 11 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 40 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 91 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tube | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 120 S | - | - |
| Fall Time | 35 ns | 35 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 61 ns | 61 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | 40 ns | - |
| Typical Turn On Delay Time | 15 ns | 15 ns | - |
| Part # Aliases | SP001575902 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 91 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 62 A | - |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Rds On Drain Source Resistance | - | 11 mOhms | - |
| Qg Gate Charge | - | 40 nC | - |
| Forward Transconductance Min | - | 120 S | - |