IRFR5305TRPBF vs IRFR5305TRPBF,FR5305 vs IRFR5305TRPBF,FR5305,IRF

 
PartNumberIRFR5305TRPBFIRFR5305TRPBF,FR5305IRFR5305TRPBF,FR5305,IRF
DescriptionMOSFET 1 P-CH -55V HEXFET 65mOhms 42nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current31 A--
Rds On Drain Source Resistance65 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge42 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation110 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 P-Channel--
TypeHEXFET Power MOSFET--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min8 S--
Fall Time63 ns--
Product TypeMOSFET--
Rise Time66 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSP001557082--
Unit Weight0.139332 oz--
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