IRFR540ZTRLPBF vs IRFR540Z vs IRFR540ZPBF

 
PartNumberIRFR540ZTRLPBFIRFR540ZIRFR540ZPBF
DescriptionMOSFET 100V SINGLE N-CH 28.5mOhms 39nCMOSFET N-CH 100V 35A DPAK
ManufacturerInfineonIRIR
Product CategoryMOSFETIC ChipsFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance28.5 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge39 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation91 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
PackagingReel-Tube
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min28 S--
Fall Time34 ns-34 ns
Product TypeMOSFET--
Rise Time42 ns-42 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time43 ns-43 ns
Typical Turn On Delay Time14 ns-14 ns
Part # AliasesSP001567620--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--91 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--35 A
Vds Drain Source Breakdown Voltage--100 V
Vgs th Gate Source Threshold Voltage--4 V
Rds On Drain Source Resistance--22.5 mOhms
Qg Gate Charge--39 nC
Forward Transconductance Min--28 S
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