IRFS4229TRLPBF vs IRFS4229PBF vs IRFS4229

PartNumber	IRFS4229TRLPBF	IRFS4229PBF	IRFS4229
Description	MOSFET MOSFT 250V 45A 48mOhm 72nC Qg	MOSFET 250V 1 N-CH HEXFET PDP SWITCH	MOSFET, N-CH, 250V, 45A, TO-263-3
Manufacturer	Infineon	Infineon	IR
Product Category	MOSFET	MOSFET	IC Chips
RoHS	Y	Y	-
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3	-
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	250 V	250 V	-
Id Continuous Drain Current	45 A	45 A	-
Rds On Drain Source Resistance	48 mOhms	42 mOhms	-
Vgs Gate Source Voltage	30 V	30 V	-
Qg Gate Charge	72 nC	72 nC	-
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Pd Power Dissipation	330 W	330 W	-
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Reel	Tube	Tube
Height	2.3 mm	2.3 mm	-
Length	6.5 mm	6.5 mm	-
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	6.22 mm	6.22 mm	-
Brand	Infineon / IR	Infineon / IR	-
Forward Transconductance Min	83 S	83 S	-
Fall Time	21 ns	21 ns	21 ns
Product Type	MOSFET	MOSFET	-
Rise Time	31 ns	31 ns	31 ns
Factory Pack Quantity	800	1000	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	30 ns	30 ns	30 ns
Typical Turn On Delay Time	18 ns	18 ns	18 ns
Part # Aliases	SP001557392	SP001576214	-
Unit Weight	0.139332 oz	0.139332 oz	0.139332 oz
Vgs th Gate Source Threshold Voltage	-	5 V	-
Type	-	PDP Switch	-
Package Case	-	-	TO-252-3
Pd Power Dissipation	-	-	330 W
Vgs Gate Source Voltage	-	-	30 V
Id Continuous Drain Current	-	-	45 A
Vds Drain Source Breakdown Voltage	-	-	250 V
Vgs th Gate Source Threshold Voltage	-	-	5 V
Rds On Drain Source Resistance	-	-	42 mOhms
Qg Gate Charge	-	-	72 nC
Forward Transconductance Min	-	-	83 S