IRFS7530TRL7PP vs IRFS7530TRLPBF vs IRFS7530TRL7P

 
PartNumberIRFS7530TRL7PPIRFS7530TRLPBFIRFS7530TRL7P
DescriptionMOSFET MOSFET N CH 60V 240A D2PAKMOSFET MOSFET N CH 60V 195A D2PAK
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-7TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current240 A195 A-
Rds On Drain Source Resistance1.4 mOhms1.65 mOhms-
Vgs th Gate Source Threshold Voltage3.7 V3.7 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge236 nC274 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameStrongIRFETStrongIRFET-
PackagingReelReelReel
Height4.4 mm2.3 mm-
Length10 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm6.22 mm-
BrandInfineon TechnologiesInfineon / IR-
Forward Transconductance Min249 S242 S-
Fall Time79 ns104 ns79 ns
Product TypeMOSFETMOSFET-
Rise Time102 ns141 ns102 ns
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time168 ns172 ns168 ns
Typical Turn On Delay Time24 ns52 ns24 ns
Part # AliasesSP001557500SP001567992-
Unit Weight0.056438 oz0.139332 oz0.056438 oz
Package Case--TO-263-7
Pd Power Dissipation--375 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--240 A
Vds Drain Source Breakdown Voltage--60 V
Vgs th Gate Source Threshold Voltage--3.7 V
Rds On Drain Source Resistance--1.4 mOhms
Qg Gate Charge--236 nC
Forward Transconductance Min--249 S
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