IRG8P08N120KD-EPBF vs IRG8P08N120KDPBF vs IRG8P15N120KD

 
PartNumberIRG8P08N120KD-EPBFIRG8P08N120KDPBFIRG8P15N120KD
DescriptionIGBT Transistors 1200V IGBT GEN8IGBT Transistors 1200V IGBT GEN8
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247AD-3--
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V1.7 V1.7 V
Maximum Gate Emitter Voltage30 V30 V30 V
Continuous Collector Current at 25 C15 A15 A30 A
Pd Power Dissipation89 W--
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
PackagingTubeTubeTube
Continuous Collector Current Ic Max8 A8 A15 A
BrandInfineon / IR--
Gate Emitter Leakage Current100 nA100 nA100 nA
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001532714--
Unit Weight0.229281 oz-6500 g
Series---
Package Case-TO-247-3TO-247AD-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-247ACTO-247AD
Power Max-89W125W
Reverse Recovery Time trr-50ns60ns
Current Collector Ic Max-15A30A
Voltage Collector Emitter Breakdown Max-1200V1200V
IGBT Type---
Current Collector Pulsed Icm-15A30A
Vce on Max Vge Ic-2V @ 15V, 5A2V @ 15V, 10A
Switching Energy-300μJ (on), 300μJ (off)600μJ (on), 600μJ (off)
Gate Charge-45nC98nC
Td on off 25°C-20ns/160ns15ns/170ns
Test Condition-600V, 5A, 47 Ohm, 15V600V, 10A, 10 Ohm, 15V
Pd Power Dissipation-89 W125 W
Collector Emitter Voltage VCEO Max-1200 V1200 V
Top