PartNumber | IRGP4266DPBF | IRGP4266D-EPBF | IRGP4266DPBF,IRGP4266D,G |
Description | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-247AC-3 | TO-247AD-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 140 A | 140 A | - |
Pd Power Dissipation | 455 W | 455 W | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 140 A | 140 A | - |
Brand | Infineon Technologies | Infineon / IR | - |
Gate Emitter Leakage Current | 100 nA | 100 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 400 | 25 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | SP001542370 | SP001540782 | - |
Unit Weight | 0.191185 oz | 0.229281 oz | - |