IRGP4266DPBF vs IRGP4266D-EPBF vs IRGP4266DPBF,IRGP4266D,G

 
PartNumberIRGP4266DPBFIRGP4266D-EPBFIRGP4266DPBF,IRGP4266D,G
DescriptionIGBT Transistors 650V Lo VCEon Trench Co-Pack IGBTIGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247AC-3TO-247AD-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.7 V1.7 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C140 A140 A-
Pd Power Dissipation455 W455 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
Continuous Collector Current Ic Max140 A140 A-
BrandInfineon TechnologiesInfineon / IR-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity40025-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001542370SP001540782-
Unit Weight0.191185 oz0.229281 oz-
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