IRGP4630D-EPBF vs IRGP4620D-EPBF vs IRGP4620DPBF

 
PartNumberIRGP4630D-EPBFIRGP4620D-EPBFIRGP4620DPBF
DescriptionIGBT Transistors IGBT DISCRETESIGBT 600V 32A 140W TO247ADIGBT Transistors 600V TRENCH IGBT ULTRAFAST
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole-Through Hole
PackagingTubeTubeTube
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001532844--
Unit Weight0.281592 oz--
Series---
Package Case-TO-247-3TO-247-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-247ADTO-247AC
Power Max-140W140W
Reverse Recovery Time trr-68ns68ns
Current Collector Ic Max-32A32A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type---
Current Collector Pulsed Icm-36A36A
Vce on Max Vge Ic-1.85V @ 15V, 12A1.85V @ 15V, 12A
Switching Energy-75μJ (on), 225μJ (off)75μJ (on), 225μJ (off)
Gate Charge-25nC25nC
Td on off 25°C-31ns/83ns31ns/83ns
Test Condition-400V, 12A, 22 Ohm, 15V400V, 12A, 22 Ohm, 15V
Configuration--Single
Pd Power Dissipation--140 W
Maximum Operating Temperature--+ 175 C
Minimum Operating Temperature--- 40 C
Collector Emitter Voltage VCEO Max--600 V
Collector Emitter Saturation Voltage--1.97 V
Continuous Collector Current at 25 C--32 A
Gate Emitter Leakage Current--100 nA
Maximum Gate Emitter Voltage--+/- 20 V
Continuous Collector Current Ic Max--20 A
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