IRGS14C40LPBF vs IRGS14C40L vs IRGS14C40L GS14C40L

 
PartNumberIRGS14C40LPBFIRGS14C40LIRGS14C40L GS14C40L
DescriptionIGBT Transistors 430V LOW-VCEON DISCRETE IGBTIGBT 430V 20A 125W D2PAK
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max430 V--
Collector Emitter Saturation Voltage1.4 V--
Maximum Gate Emitter Voltage10 V--
Continuous Collector Current at 25 C20 A--
Pd Power Dissipation125 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTube-
Continuous Collector Current Ic Max20 A--
Height4.83 mm--
Length10.67 mm--
Width9.65 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Part # AliasesSP001533072--
Unit Weight0.009185 oz--
Series---
Package Case-TO-263-3, D2Pak (2 Leads + Tab), TO-263AB-
Input Type-Logic-
Mounting Type-Surface Mount-
Supplier Device Package-D2PAK-
Power Max-125W-
Reverse Recovery Time trr---
Current Collector Ic Max-20A-
Voltage Collector Emitter Breakdown Max-430V-
IGBT Type---
Current Collector Pulsed Icm---
Vce on Max Vge Ic-1.75V @ 5V, 14A-
Switching Energy---
Gate Charge-27nC-
Td on off 25°C-900ns/6μs-
Test Condition---
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