IRL640A vs IRL640 vs IRL640APBF

 
PartNumberIRL640AIRL640IRL640APBF
DescriptionMOSFET 200V N-Channel a-FET Logic LevelMOSFET RECOMMENDED ALT 844-IRL640PBF
ManufacturerON SemiconductorVishayF
Product CategoryMOSFETMOSFETIC Chips
RoHSYN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance180 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation110 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height16.3 mm15.49 mm-
Length10.67 mm10.41 mm-
SeriesIRL640A--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildVishay / Siliconix-
Forward Transconductance Min13.3 S--
Fall Time15 ns--
Product TypeMOSFETMOSFET-
Rise Time8 ns--
Factory Pack Quantity100050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time46 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesIRL640A_NL--
Unit Weight0.063493 oz0.211644 oz-
Top