IRL80HS120 vs IRL 80A vs IRL801-C

 
PartNumberIRL80HS120IRL 80AIRL801-C
DescriptionMOSFETInfrared Emitters Infrared, 950nm HALF ANGLE +/-30DEG
ManufacturerInfineonOsram Opto Semiconductor-
Product CategoryMOSFETInfrared Emitters-
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMTThrough Hole-
Package / CasePQFN-6Side Looker-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current12.5 A--
Rds On Drain Source Resistance25 mOhms--
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7 nC--
Minimum Operating Temperature- 55 C- 40 C-
Maximum Operating Temperature+ 175 C+ 100 C-
Pd Power Dissipation11.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandInfineon TechnologiesOSRAM Opto Semiconductors-
Forward Transconductance Min14 S--
Fall Time10 ns500 ns-
Product TypeMOSFETIR Emitters (IR LEDs)-
Rise Time22 ns500 ns-
Factory Pack Quantity40002000-
SubcategoryMOSFETsInfrared Data Communications-
Typical Turn Off Delay Time9.2 ns--
Typical Turn On Delay Time7.6 ns--
Part # AliasesSP001592838Q68000A7851-
Wavelength-950 nm-
Radiant Intensity-0.4 mW/sr-
Beam Angle-30 deg-
If Forward Current-20 mA-
Vf Forward Voltage-1.2 V-
Power Rating-100 mW-
Height-5.84 mm-
Illumination Color-Infrared-
Length-4.57 mm-
Type-GaAs Infrared Emitter-
Width-2.54 mm-
Lens Shape-Circular-
Viewing Angle-30 deg-
Lens Dimensions-1.52 mm x 1.52 mm x 0.84 mm-
Responsivity---
Vr Reverse Voltage-3 V-
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