IRLD024PBF vs IRLD024 vs IRLD024-IRLD024

 
PartNumberIRLD024PBFIRLD024IRLD024-IRLD024
DescriptionMOSFET N-CH 60V HEXFET MOSFET HEXDIMOSFET RECOMMENDED ALT 844-IRLD024PBF
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseHVMDIP-4HVMDIP-4-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1.8 A--
Rds On Drain Source Resistance100 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage5 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation1.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height3.37 mm3.37 mm-
Length6.29 mm6.29 mm-
Transistor Type1 N-Channel--
Width5 mm5 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min3.7 S--
Fall Time41 ns--
Product TypeMOSFETMOSFET-
Rise Time110 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time11 ns--
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