IRLW510ATM vs IRLW510A vs IRLW520A

 
PartNumberIRLW510ATMIRLW510AIRLW520A
DescriptionMOSFET 100V N-Channel a-FET Logic Level
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current5.6 A--
Rds On Drain Source Resistance440 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min10.2 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.011640 oz--
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