IS42S16800E-6BL-TR vs IS42S16800E-6BLI vs IS42S16800E-6BL

 
PartNumberIS42S16800E-6BL-TRIS42S16800E-6BLIIS42S16800E-6BL
DescriptionDRAM 128M (8Mx16) 166MHz SDRAM, 3.3vDRAM 128M (8Mx16) 166MHz SDR SDRAM, 3.3VDRAM 128M (8Mx16) 166MHz SDR SDRAM, 3.3V
ManufacturerISSIISSI, Integrated Silicon Solution IncISSI, Integrated Silicon Solution Inc
Product CategoryDRAMMemoryMemory
RoHSY--
TypeSDRAM--
Data Bus Width16 bit--
Organization8 M x 16--
Package / CaseBGA-54--
Memory Size128 Mbit128M (8M x 16)128M (8M x 16)
Maximum Clock Frequency166 MHz--
Access Time5.4 ns--
Supply Voltage Max3.6 V--
Supply Voltage Min3 V--
Supply Current Max150 mA--
Minimum Operating Temperature0 C--
Maximum Operating Temperature+ 70 C--
SeriesIS42S16800E-6--
PackagingReelTrayTray
Height0.8 mm--
Length8 mm--
Width8 mm--
BrandISSI--
Mounting StyleSMD/SMT--
Moisture SensitiveYes--
Operating Supply Voltage3.3 V--
Product TypeDRAM--
Factory Pack Quantity2500--
SubcategoryMemory & Data Storage--
Unit Weight0.003517 oz--
Package Case-54-TFBGA54-TFBGA
Operating Temperature--40°C ~ 85°C (TA)0°C ~ 70°C (TA)
Interface-ParallelParallel
Voltage Supply-3 V ~ 3.6 V3 V ~ 3.6 V
Supplier Device Package-54-TFBGA (8x8)54-TFBGA (8x8)
Memory Type-SDRAMSDRAM
Speed-166MHz166MHz
Format Memory-RAMRAM
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