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| PartNumber | ISL9N302AP3 | ISL9N302AS3 | ISL9N302AP |
| Description | MOSFET N-Channel PWM Logic Level | MOSFET N-Ch LL UltraFET PWM Optimized | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 75 A | 75 A | - |
| Rds On Drain Source Resistance | 1.9 mOhms | 1.9 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 345 W | 345 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Height | 16.3 mm | 4.83 mm | - |
| Length | 10.67 mm | 10.67 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Width | 4.7 mm | 9.65 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 34 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 120 ns | - | - |
| Factory Pack Quantity | 400 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 45 ns | - | - |
| Typical Turn On Delay Time | 29 ns | - | - |
| Part # Aliases | ISL9N302AP3_NL | - | - |
| Unit Weight | 0.079014 oz | 0.050717 oz | - |