IXBH10N170 vs IXBH10N300HV vs IXBH10N120

 
PartNumberIXBH10N170IXBH10N300HVIXBH10N120
DescriptionIGBT Transistors 10 Amps 1700V 2.3 RdsIGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSY--
TechnologySiSi-
Package / CaseTO-247-3TO-247HV-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1700 V3 kV-
Collector Emitter Saturation Voltage2.3 V2.2 V-
Maximum Gate Emitter Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXBH10N170--
PackagingTube--
Continuous Collector Current Ic Max20 A88 A-
Height21.46 mm--
Length16.26 mm--
Width5.3 mm--
BrandIXYSIXYS-
Continuous Collector Current16 A--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
TradenameBIMOSFET--
Unit Weight0.229281 oz--
Continuous Collector Current at 25 C-34 A-
Pd Power Dissipation-180 W-
Gate Emitter Leakage Current-100 nA-
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