PartNumber | IXBH10N170 | IXBH10N300HV | IXBH10N120 |
Description | IGBT Transistors 10 Amps 1700V 2.3 Rds | IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT | |
Manufacturer | IXYS | IXYS | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Package / Case | TO-247-3 | TO-247HV-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 1700 V | 3 kV | - |
Collector Emitter Saturation Voltage | 2.3 V | 2.2 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | IXBH10N170 | - | - |
Packaging | Tube | - | - |
Continuous Collector Current Ic Max | 20 A | 88 A | - |
Height | 21.46 mm | - | - |
Length | 16.26 mm | - | - |
Width | 5.3 mm | - | - |
Brand | IXYS | IXYS | - |
Continuous Collector Current | 16 A | - | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | IGBTs | IGBTs | - |
Tradename | BIMOSFET | - | - |
Unit Weight | 0.229281 oz | - | - |
Continuous Collector Current at 25 C | - | 34 A | - |
Pd Power Dissipation | - | 180 W | - |
Gate Emitter Leakage Current | - | 100 nA | - |