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| PartNumber | IXBK64N250 | IXBK55N300 | IXBK75N170 |
| Description | Gate Drivers BIMOSFET 2500V 75A | IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT | IGBT Transistors BIMOSFETS 1700V 200A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Gate Drivers | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Series | Very High Voltage | Very High Voltage | IXBK75N170 |
| Packaging | Tube | Tube | Tube |
| Technology | Si | Si | Si |
| Brand | IXYS | IXYS | IXYS |
| Product Type | Gate Drivers | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | PMIC - Power Management ICs | IGBTs | IGBTs |
| Tradename | BIMOSFET | BIMOSFET | BIMOSFET |
| Unit Weight | 0.225753 oz | 0.264555 oz | 0.373904 oz |
| Package / Case | - | TO-264-3 | TO-264-3 |
| Mounting Style | - | Through Hole | Through Hole |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 3 kV | - |
| Collector Emitter Saturation Voltage | - | 2.7 V | - |
| Maximum Gate Emitter Voltage | - | 25 V | - |
| Continuous Collector Current at 25 C | - | 130 A | - |
| Pd Power Dissipation | - | 625 W | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Continuous Collector Current Ic Max | - | 130 A | - |
| Height | - | 26.59 mm | 26.16 mm |
| Length | - | 20.29 mm | 19.96 mm |
| Width | - | 5.31 mm | 5.13 mm |
| Gate Emitter Leakage Current | - | +/- 200 nA | - |