IXBT12N300HV vs IXBT10N170 vs IXBT12N300

 
PartNumberIXBT12N300HVIXBT10N170IXBT12N300
DescriptionIGBT Transistors DISC IGBT BIMSFT-VERYHIVOLTIGBT Transistors 10 Amps 1700V 2.3 RdsIGBT 3000V 30A 160W TO268
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-268-2TO-268-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max3 kV1.7 kV-
Collector Emitter Saturation Voltage2.8 V3.4 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C30 A20 A-
Pd Power Dissipation160 W140 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesVery High VoltageIXBT10N170-
PackagingTubeTube-
Continuous Collector Current Ic Max30 A40 A-
BrandIXYSIXYS-
Gate Emitter Leakage Current+/- 100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
TradenameBIMOSFETBIMOSFET-
Unit Weight0.141096 oz0.158733 oz-
Height-5.1 mm-
Length-16.05 mm-
Operating Temperature Range-- 55 C to + 150 C-
Width-14 mm-
Continuous Collector Current-20 A-
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