IXFA4N100P vs IXFA4N100P-TRL vs IXFA4N100

 
PartNumberIXFA4N100PIXFA4N100P-TRLIXFA4N100
DescriptionMOSFET 4 Amps 1000VMOSFET IXFA4N100P TRL
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance3.3 Ohms--
Vgs th Gate Source Threshold Voltage6 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge26 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameHiPerFET--
PackagingTubeReel-
Height4.83 mm--
Length9.65 mm--
SeriesIXFA4N100POLAR-
Transistor Type1 N-Channel--
TypePolar HiPerFET Power MOSFET--
Width10.41 mm--
BrandIXYSIXYS-
Forward Transconductance Min1.8 S--
Fall Time50 ns--
Product TypeMOSFETMOSFET-
Rise Time36 ns--
Factory Pack Quantity50800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time37 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.056438 oz--
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