IXFB30N120P vs IXFB300N10P vs IXFB30N120Q2

 
PartNumberIXFB30N120PIXFB300N10PIXFB30N120Q2
DescriptionMOSFET 30 Amps 1200V 0.35 RdsMOSFET POLAR PWR MOSFET 100V, 300AMOSFET N-CH 1200V 30A PLUS264
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CasePLUS-264-3PLUS-264-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1.2 kV100 V-
Id Continuous Drain Current30 A300 A-
Rds On Drain Source Resistance350 mOhms5.5 mOhms-
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge310 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 kW--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height26.59 mm--
Length20.29 mm--
SeriesIXFB30N120PIXFB300N10-
Transistor Type1 N-Channel1 N-Channel-
TypePolar HiPerFET Power MOSFET--
Width5.31 mm--
BrandIXYSIXYS-
Forward Transconductance Min13 S--
Fall Time56 ns--
Product TypeMOSFETMOSFET-
Rise Time60 ns--
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time95 ns--
Typical Turn On Delay Time57 ns--
Unit Weight0.056438 oz0.373904 oz-
Top