IXFB44N100P vs IXFB40N110P vs IXFB40N110Q3

 
PartNumberIXFB44N100PIXFB40N110PIXFB40N110Q3
DescriptionMOSFET 44 Amps 1000V 0.22 RdsMOSFET 40 Amps 1100V 0.2600 RdsMOSFET N-CH 1100V 40A PLUS264
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CasePLUS-264-3PLUS-264-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV1.1 kV-
Id Continuous Drain Current44 A40 A-
Rds On Drain Source Resistance220 mOhms260 mOhms-
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge305 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.25 kW1.25 kW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height26.59 mm26.59 mm-
Length20.29 mm20.29 mm-
SeriesIXFB44N100IXFB40N110-
Transistor Type1 N-Channel1 N-Channel-
TypePolar Power MOSFET HiPerFET--
Width5.31 mm5.31 mm-
BrandIXYSIXYS-
Forward Transconductance Min20 S--
Fall Time56 ns54 ns-
Product TypeMOSFETMOSFET-
Rise Time68 ns55 ns-
Factory Pack Quantity2530-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time90 ns110 ns-
Typical Turn On Delay Time60 ns53 ns-
Unit Weight0.056438 oz0.056438 oz-
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