IXFH18N60P vs IXFH18N100Q3 vs IXFH18N60X

 
PartNumberIXFH18N60PIXFH18N100Q3IXFH18N60X
DescriptionMOSFET 600V 18AMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18AMOSFET DISCMSFT NCH ULTRJNCTN XCLASS
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V1 kV600 V
Id Continuous Drain Current18 A18 A18 A
Rds On Drain Source Resistance400 mOhms660 mOhms230 mOhms
Vgs Gate Source Voltage30 V30 V30 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation360 W830 W320 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTube-
Height21.46 mm--
Length16.26 mm--
SeriesIXFH18N60IXFH18N100-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.3 mm--
BrandIXYSIXYSIXYS
Forward Transconductance Min16 S16 S-
Fall Time22 ns13 ns24 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time22 ns33 ns30 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time62 ns40 ns63 ns
Typical Turn On Delay Time21 ns37 ns20 ns
Unit Weight0.229281 oz0.056438 oz-
Qg Gate Charge-90 nC35 nC
Vgs th Gate Source Threshold Voltage--2.5 V
Top