PartNumber | IXFH18N60P | IXFH18N60X | IXFH18N65X2 |
Description | MOSFET 600V 18A | MOSFET DISCMSFT NCH ULTRJNCTN XCLASS | MOSFET 650V/18A TO-247 |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 650 V |
Id Continuous Drain Current | 18 A | 18 A | 18 A |
Rds On Drain Source Resistance | 400 mOhms | 230 mOhms | 200 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V | 10 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 360 W | 320 W | 290 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | - | Tube |
Height | 21.46 mm | - | - |
Length | 16.26 mm | - | - |
Series | IXFH18N60 | - | 650V Ultra Junction X2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.3 mm | - | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 16 S | - | 8 S |
Fall Time | 22 ns | 24 ns | 26 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 22 ns | 30 ns | 30 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 62 ns | 63 ns | 50 ns |
Typical Turn On Delay Time | 21 ns | 20 ns | 20 ns |
Unit Weight | 0.229281 oz | - | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | 3 V |
Qg Gate Charge | - | 35 nC | 29 nC |