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| PartNumber | IXFH30N50P | IXFH30N50Q | IXFH30N50 |
| Description | MOSFET 500V 30A | MOSFET 30 Amps 500V 0.16 Rds | MOSFET 30 Amps 500V 0.16 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 200 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 460 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | - | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Series | IXFH30N50 | IXFH30N50 | IXFH30N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.3 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 27 S | - | - |
| Fall Time | 24 ns | 20 ns | 26 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 24 ns | 42 ns | 42 ns |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 82 ns | 75 ns | 110 ns |
| Typical Turn On Delay Time | 25 ns | 35 ns | 35 ns |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |
| Package Case | - | TO-247-3 | TO-247-3 |
| Pd Power Dissipation | - | 360 W | 360 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 30 A | 30 A |
| Vds Drain Source Breakdown Voltage | - | 500 V | 500 V |
| Rds On Drain Source Resistance | - | 160 mOhms | 160 mOhms |