IXFH52N30Q vs IXFH52N30P vs IXFH52N30P3

 
PartNumberIXFH52N30QIXFH52N30PIXFH52N30P3
DescriptionMOSFET 300V 52AMOSFET 52 Amps 300V 0.066 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V300 V-
Id Continuous Drain Current52 A52 A-
Rds On Drain Source Resistance60 mOhms73 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation360 W400 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
SeriesIXFH52N30IXFH52N30-
Transistor Type1 N-Channel1 N-Channel-
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Forward Transconductance Min35 S20 S-
Fall Time25 ns20 ns-
Product TypeMOSFETMOSFET-
Rise Time60 ns22 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time80 ns60 ns-
Typical Turn On Delay Time27 ns24 ns-
Unit Weight0.229281 oz0.229281 oz-
Vgs th Gate Source Threshold Voltage-5 V-
Qg Gate Charge-110 nC-
Type-Polar Power MOSFETs HiPerFET-
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