IXFJ20N85X vs IXFJ15N100Q vs IXFJ13N50

 
PartNumberIXFJ20N85XIXFJ15N100QIXFJ13N50
DescriptionMOSFET DISCMSFT NCH ULTRJNCTN XCLASSMOSFET N-CH TO-220MOSFET 13 Amps 500V 0.4 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-SMD/SMT
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage850 V--
Id Continuous Drain Current9.5 A--
Rds On Drain Source Resistance360 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge63 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation110 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHiPerFET-HyperFET
PackagingTube-Tube
SeriesX-Class-IXFJ13N50
Transistor Type1 N-Channel-1 N-Channel
BrandIXYS--
Forward Transconductance Min6 S--
Fall Time20 ns-32 ns
Product TypeMOSFET--
Rise Time28 ns-27 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time44 ns-76 ns
Typical Turn On Delay Time20 ns-18 ns
Unit Weight0.176370 oz-0.229281 oz
Package Case--TO-268-2
Pd Power Dissipation--180 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--13 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--400 mOhms
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