 | | | |
| PartNumber | IXFK200N10P | IXFK20N120P | IXFK20N120 |
| Description | MOSFET 200 Amps 100V 0.0075 Rds | MOSFET 20 Amps 1200V 1 Rds | MOSFET 20 Amps 1200 V 0.75 Ohms Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 1.2 kV | 1.2 kV |
| Id Continuous Drain Current | 200 A | 20 A | 20 A |
| Rds On Drain Source Resistance | 7.5 mOhms | 570 mOhms | 750 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 6.5 V | - |
| Vgs Gate Source Voltage | 20 V | 30 V | 30 V |
| Qg Gate Charge | 235 nC | 193 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 830 W | 780 W | 780 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 26.59 mm | 26.16 mm | 26.16 mm |
| Length | 20.29 mm | 19.96 mm | 19.96 mm |
| Series | IXFK200N10 | IXFK20N120 | IXFK20N120 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Polar HiPerFET Power MOSFET | Polar Power MOSFET HiPerFET | - |
| Width | 5.31 mm | 5.13 mm | 5.13 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 60 S | 10 S | - |
| Fall Time | 90 ns | 70 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 35 ns | 45 ns | 45 ns |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 150 ns | 72 ns | 75 ns |
| Typical Turn On Delay Time | 30 ns | 49 ns | 25 ns |
| Unit Weight | 0.352740 oz | 0.352740 oz | 0.352740 oz |