PartNumber | IXFK360N15T2 | IXFK360N10T | IXFK36N60 |
Description | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A | MOSFET 600V 36A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264 | TO-264-3 | TO-264-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
Pd Power Dissipation | 1670 W | 1.25 kW | 500 W |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Product | MOSFET Gate Drivers | - | - |
Series | IXFK360N15 | IXFK360N10 | IXFK36N60 |
Brand | IXYS | IXYS | IXYS |
Fall Time | 265 ns | 160 ns | 60 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 170 ns | 100 ns | 45 ns |
Factory Pack Quantity | 25 | 25 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.352740 oz | 0.264555 oz | 0.352740 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 100 V | 600 V |
Id Continuous Drain Current | - | 360 A | 36 A |
Rds On Drain Source Resistance | - | 2.9 mOhms | 180 mOhms |
Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 525 nC | - |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | 180 S | 36 S |
Typical Turn Off Delay Time | - | 80 ns | 100 ns |
Typical Turn On Delay Time | - | 47 ns | 30 ns |
Height | - | - | 26.16 mm |
Length | - | - | 19.96 mm |
Width | - | - | 5.13 mm |