IXFN180N15P vs IXFN180N10 vs IXFN180N07

 
PartNumberIXFN180N15PIXFN180N10IXFN180N07
DescriptionMOSFET 180 Amps 150V 0.011 RdsMOSFET 180 Amps 100V 0.008 RdsMOSFET 180 Amps 70V 0.007 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleChassis MountChassis MountChassis Mount
Package / CaseSOT-227-4SOT-227-4SOT-227-4
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage150 V100 V70 V
Id Continuous Drain Current150 A180 A180 A
Rds On Drain Source Resistance11 mOhms8 mOhms6 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
Pd Power Dissipation680 W600 W520 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFET-
PackagingTubeTubeTube
Height9.6 mm9.6 mm9.6 mm
Length38.23 mm38.23 mm38.2 mm
SeriesIXFN180N15IXFN180N10IXFN180N07
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width25.42 mm25.42 mm25.07 mm
BrandIXYSIXYSIXYS
Fall Time36 ns65 ns60 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time32 ns90 ns60 ns
Factory Pack Quantity101010
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time150 ns140 ns100 ns
Typical Turn On Delay Time30 ns50 ns30 ns
Unit Weight1.058219 oz1.058219 oz1.058219 oz
Forward Transconductance Min--80 S
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